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Datasheet FQA9N90 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
4 FQA9N90   900V N-Channel MOSFET

FQA9N90 March 2001 QFET FQA9N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resista
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FQA9N90 pdf
3 FQA9N90C   900V N-Channel MOSFET

FQA9N90C QFET FQA9N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provi
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FQA9N90C pdf
2 FQA9N90C_F109   MOSFET ( Transistor )

FQA9N90C_F109 — N-Channel QFET® MOSFET FQA9N90C_F109 N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω Features • 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 45 nC) • Low Crss . 14 pF) • 100% Avalanche Tested • RoHS compliant April 2014 Description
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FQA9N90C_F109 pdf
1 FQA9N90_F109   N-Channel QFET MOSFET

FQA9N90_F109 — N-Channel QFET® MOSFET FQA9N90_F109 N-Channel QFET® MOSFET 900 V, 8.6 A, 1.3 Ω May 2014 Features • 8.6 A, 900 V, RDS(on) = 1.3 Ω (Max.) @ VGS = 10 V, ID = 4.3 A • Low Gate Charge (Typ. 55 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested • RoHS Compliant Descri
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FQA9N90_F109 pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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