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4 FQA11N90   900V N-Channel MOSFET

FQA11N90 September 2000 QFET FQA11N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced te
Fairchild Semiconductor
Fairchild Semiconductor
Datenblatt FQA11N90 pdf
3 FQA11N90C   900V N-Channel MOSFET

FQA11N90C 900V N-Channel MOSFET September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 23pF) Fast switching 100% ava
Fairchild Semiconductor
Fairchild Semiconductor
Datenblatt FQA11N90C pdf
2 FQA11N90C_F109   MOSFET

FQA11N90C_F109 — N-Channel QFET® MOSFET FQA11N90C_F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A • Low Gate Charge (Typ. 60 nC) • Low Crss (Typ. 23 pF)
Fairchild Semiconductor
Fairchild Semiconductor
Datenblatt FQA11N90C_F109 pdf
1 FQA11N90_F109   N-Channel QFET MOSFET

FQA11N90_F109 — N-Channel QFET® MOSFET FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ Features • 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A • Low Gate Charge (Typ. 72 nC) • Low Crss (Typ. 30 pF)
Fairchild Semiconductor
Fairchild Semiconductor
Datenblatt FQA11N90_F109 pdf


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