Datasheet FDT459N Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDT459N	N-Channel Enhancement Mode Field Effect Transistor March 1998 FDT459N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize	Fairchild Semiconductor

FDT4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDT434P	P-Channel 2.5V Specified PowerTrench MOSFET FDT434P January 2000 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance	Fairchild Semiconductor
FDT439N	N-Channel 2.5V Specified EnhancementMode Field Effect Transistor FDT439N June 1999 FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high de	Fairchild Semiconductor
FDT461N	N-Channel Logic Level PowerTrench MOSFET FDT461N April 2004 FDT461N N-Channel Logic Level PowerTrench® MOSFET 100V, 0.4A, 2.5Ω Features • rDS(ON) = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Qg(tot) = 2.36nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode Applications • Servo Motor Load Control	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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