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Datasheet FDS4835 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | FDS4885C | Dual N & P-Channel PowerTrench MOSFET
FDS4885C
January 2005
FDS4885C
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored |
 Fairchild Semiconductor |
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| 3 | FDS4895C | Dual N & P-Channel PowerTrench MOSFET
FDS4895C
June 2005
FDS4895C
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to |
Fairchild Semiconductor |
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| 2 | FDS4897AC | MOSFET ( Transistor ) FDS4897AC Dual N & P-Channel PowerTrench® MOSFET
FDS4897AC
October 2008
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ
Features
General Description
Q1: N-Channel Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A Max rDS(on) = 31 m |
Fairchild Semiconductor |
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| 1 | FDS4897C | Dual N & P-Channel PowerTrench MOSFET
FDS4897C Dual N & P-Channel PowerTrench® MOSFET
November 2005
FDS4897C
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench p |
Fairchild Semiconductor |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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