|
|
Datasheet FDG6316 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | FDG6316 | P-Channel 1.8V Specified PowerTrench MOSFET FDG6316P
December 2001
FDG6316P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
• –0.7 A, –12 V. RDS |
Fairchild Semiconductor |
|
1 | FDG6316P | P-Channel 1.8V Specified PowerTrench MOSFET FDG6316P
December 2001
FDG6316P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
• –0.7 A, –12 V. RDS |
Fairchild Semiconductor |
Esta página es del resultado de búsqueda del FDG6316. Si pulsa el resultado de búsqueda de FDG6316 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |