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Datasheet FDG326 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | FDG326 | P-Channel 1.8V Specified PowerTrench MOSFET FDG326P
January 2001
FDG326P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
• –1.5 A, –20 V. RDS(ON |
Fairchild Semiconductor |
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1 | FDG326P | P-Channel 1.8V Specified PowerTrench MOSFET FDG326P
January 2001
FDG326P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
• –1.5 A, –20 V. RDS(ON |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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