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41 F30   Diode Switching 3KV 0.35A 2-Pin Case G-66

New Jersey Semiconductor
New Jersey Semiconductor
Datenblatt F30 pdf
40 F3002   PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver an
Polyfet RF Devices
Polyfet RF Devices
Datenblatt F3002 pdf
39 F3003   Tube

CSF
CSF
Datenblatt F3003 pdf
38 F301   Diode

American Microsemiconductor
American Microsemiconductor
Datenblatt F301 pdf
37 F3027   Tube

CSF
CSF
Datenblatt F3027 pdf


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