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Datasheet F1221 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | F1221 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly |
Polyfet RF Devices |
F1 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
F16-100HIP | EN25F16-100HIP |
Eon Silicon Solution |
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F12C20C | 12.0 Ampere Common Cathode Fast Recovery Rectifier Diode |
Thinki Semiconductor |
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F16C20C | 16.0 Ampere Heatsink Common Anode Fast Recovery Rectifier Diode |
Thinki Semiconductor |
Esta página es del resultado de búsqueda del F1221. Si pulsa el resultado de búsqueda de F1221 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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