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F1060 PDF ( Data Sheet )

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2 F1060   PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver an
Polyfet RF Devices
Polyfet RF Devices
Datenblatt F1060 pdf
1 F1060CT   Schottky Barrier Rectifiers

Production specification Schottky Barrier Rectifiers FEATURES z STSD F1030CT---STSD F1060CT Metal-Semiconductor Junction with Guard Ring. z Epit axial Construction. z Pb Lead-free Low Forward Voltage Drop,Low Switching Losses. Surge C
Tasund
Tasund
Datenblatt F1060CT pdf


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