F1060 PDF ( Data Sheet )

No	Teilenummer	Beschreibung	Hersteller	PDF
2	F1060	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver an	Polyfet RF Devices
1	F1060CT	Schottky Barrier Rectifiers Production specification Schottky Barrier Rectifiers FEATURES z STSD F1030CT---STSD F1060CT Metal-Semiconductor Junction with Guard Ring. z Epit axial Construction. z Pb Lead-free Low Forward Voltage Drop,Low Switching Losses. Surge C	Tasund

[1]

Teilenummer	Beschreibung	Hersteller	PDF
TDA7468	TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR.	STMicroelectronics	PDF
SBW3320	High Voltage Fast-Swit NPN Power Transistor	WINSEMI SEMICONDUCTOR	PDF
RLD78NZM5	780nm low power single mode laser diode	ROHM	PDF