Datasheet F1047B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	F1047B	Infrared Emitting Diode Chip GaAlAs-Infrarot-Lumineszenzdiode (880 nm) GaAlAs Infrared Emitting Diode (880 nm) F 1047A F 1047B Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Typ. Gesamtleistung: 22 mW @ 100 mA im TOPLED® Gehäuse • Chipgröße 300 x 300 µm2 • GaAlAs-LED mit sehr hohem	Osram Opto Semiconductors

F10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
F10U60DN	FFPF10U60DN FFPF10U60DN FFPF10U60DN Features • High voltage and high reliability • High speed switching • Low forward voltage Applications • • • • General purpose Switching mode power supply Free-wheeling diode for motor application Power switching circuit	Fairchild Semiconductor
F1010N	IRF1010N PD - 91278 IRF1010N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 11mΩ G S ID = 85A Description Advanced HEXFET® Power	International Rectifier
F10F150S	FFPF10F150S FFPF10F150S FFPF10F150S Features • High voltage and high reliability • High speed switching • Low forward voltage Applications • Suitable for damper diode in horizontal deflection circuits 1 2 TO-220F 1. Cathode 2. Anode DAMPER DIODE Absolute Max	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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