|
|
|
F1022 PDF ( Data Sheet ) |
| No | Teilenummer | Beschreibung | Hersteller | |
| 1 | F1022 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver an |
 Polyfet RF Devices |
 |
F102 Datasheet - resultados coincidentes |
| Teilenummer | Beschreibung | Hersteller | |
| F1027 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
|
| F1021 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
|
| F1020 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
|
| F1022 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
|
| F102 | Diode ( Rectifier ) |
 American Microsemiconductor |
|
[1]
Neueste Updates
| Teilenummer | Beschreibung | Hersteller | |
| TDA7468 | TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR. |
 STMicroelectronics |
|
| SBW3320 | High Voltage Fast-Swit NPN Power Transistor |
 WINSEMI SEMICONDUCTOR |
|
| RLD78NZM5 | 780nm low power single mode laser diode |
 ROHM |
| www.Datenblatt-PDF.com | 2020 | Kontakt | 1 | ALL |