Datenblatt-pdf.com F101 Datenblatt


F101 PDF ( Data Sheet )

No Teilenummer Beschreibung Hersteller PDF
11 F101   Diode

American Microsemiconductor
American Microsemiconductor
Datenblatt F101 pdf
10 F1010EL    IRF1010EL

PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated G HEXFET® Power
Power MOSFET
Power MOSFET
Datenblatt F1010EL pdf
9 F1010ES    IRF1010ES

PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated G HEXFET® Power
Power MOSFET
Power MOSFET
Datenblatt F1010ES pdf
8 F1010N   IRF1010N

PD - 91278 IRF1010N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 11mΩ G S ID = 85
International Rectifier
International Rectifier
Datenblatt F1010N pdf
7 F1012   PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver an
Polyfet RF Devices
Polyfet RF Devices
Datenblatt F1012 pdf


[1] [2] [3] 

Neueste Updates

Teilenummer Beschreibung Hersteller PDF
TDA7468

TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR.

STMicroelectronics

STMicroelectronics
PDF
SBW3320

High Voltage Fast-Swit NPN Power Transistor

WINSEMI SEMICONDUCTOR

WINSEMI SEMICONDUCTOR
PDF
RLD78NZM5

780nm low power single mode laser diode

ROHM

ROHM
PDF


www.Datenblatt-PDF.com    |  2020    |  Kontakt   |   1   |   ALL