|
|
|
F101 PDF ( Data Sheet ) |
| No | Teilenummer | Beschreibung | Hersteller | |
| 11 | F101 | Diode |
 American Microsemiconductor |
 |
| 10 | F1010EL | IRF1010EL PD - 91720
IRF1010ES IRF1010EL
l l l l l l
Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
G
HEXFET® Power |
 Power MOSFET |
|
| 9 | F1010ES | IRF1010ES PD - 91720
IRF1010ES IRF1010EL
l l l l l l
Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
G
HEXFET® Power |
Power MOSFET |
|
| 8 | F1010N | IRF1010N PD - 91278
IRF1010N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 55V RDS(on) = 11mΩ
G S
ID = 85 |
 International Rectifier |
|
| 7 | F1012 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver an |
 Polyfet RF Devices |
|
Neueste Updates
| Teilenummer | Beschreibung | Hersteller | |
| TDA7468 | TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR. |
 STMicroelectronics |
|
| SBW3320 | High Voltage Fast-Swit NPN Power Transistor |
 WINSEMI SEMICONDUCTOR |
|
| RLD78NZM5 | 780nm low power single mode laser diode |
 ROHM |
| www.Datenblatt-PDF.com | 2020 | Kontakt | 1 | ALL |