Datasheet F1001C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	F1001C	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for great	Polyfet RF Devices

F10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
F10U60DN	FFPF10U60DN FFPF10U60DN FFPF10U60DN Features • High voltage and high reliability • High speed switching • Low forward voltage Applications • • • • General purpose Switching mode power supply Free-wheeling diode for motor application Power switching circuit	Fairchild Semiconductor
F1010N	IRF1010N PD - 91278 IRF1010N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 11mΩ G S ID = 85A Description Advanced HEXFET® Power	International Rectifier
F10F150S	FFPF10F150S FFPF10F150S FFPF10F150S Features • High voltage and high reliability • High speed switching • Low forward voltage Applications • Suitable for damper diode in horizontal deflection circuits 1 2 TO-220F 1. Cathode 2. Anode DAMPER DIODE Absolute Max	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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