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D649 Datenblatt PDF

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1 D649   2SD649

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability APPLICATIONS ·Designed for line-operated horizontal deflection output
Inchange Semiconductor
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Datenblatt D649 pdf


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