Datasheet D363 Equivalent ( PDF )

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD363 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Collector Power Dissipation: PC= 40W(Max)@ TC= 25℃ APPLICATIONS ·Designed for B/W TV horizontal deflection output applications. A