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2 D1047   High power NPN epitaxial planar bipolar transistor

2SD1047 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor m
STMicroelectronics
STMicroelectronics
Datenblatt D1047 pdf
1 D1047   2SD1047

www.DataSheet.co.kr Ordering number:ENN680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features · Capable of being mounted easily because of
Sanyo Semicon Device
Sanyo Semicon Device
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