D1012UK PDF Datasheet

TetraFET D1012UK METAL GATE RF SILICON FET MECHANICAL DATA B (4 pls) C G (typ) 2 1 A D 3 E 5 I F 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN N M H J K • SUITABLE FOR BROAD BAND APPLICATIONS DRAIN 1 GATE 2 DH PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 DIM A B C D E F G H I

Ordering number : EN0676F 2SD1012 SANYO Semiconductors DATA SHEET 2SD1012 Specifications Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Te

Ordering number : EN0676F 2SD1012 Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single SPA Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)

ARTCHIP SEMICONDUCTOR Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. Features

C2D10120–Silicon Carbide Schottky Diode Zero Recovery® Rectifier Features • • • • • • • VRRM = 1200 V IF = 10 A Qc = 61 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Tempe

C2D10120A Silicon Carbide Schottky Diode VRRM = 1200 VRRM = 1200 V V IF (TC=135˚C) = 14.5 A IF = 10 A Qc nC 61 nC Qc = = 61 Zero R Features ecovery® Rectifier Package • • • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current