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Datasheet CS10N80AND Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CS10N80AND   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS10N80 AND ○R General Description: CS10N80 AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can
Huajing Microelectronics
Huajing Microelectronics
datasheet CS10N80AND pdf

CS10N80 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CS10N80FA9D

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS10N80F A9D ○R General Description: CS10N80F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 800 10 60 0.72
Huajing Microelectronics
Huajing Microelectronics
datasheet pdf - Huajing Microelectronics
CS10N80AND

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS10N80 AND ○R General Description: CS10N80 AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Huajing Microelectronics
Huajing Microelectronics
datasheet pdf - Huajing Microelectronics
CS10N80A8D

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS10N80 A8D ○R General Description: CS10N80 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 800 10 160 0.72
Huajing Microelectronics
Huajing Microelectronics
datasheet pdf - Huajing Microelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

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