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CS10N60 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
6 | CS10N60 | VDMOS Transistor 华晶分立器件
CS10N60
CS10N60 型 VDMOS 晶体管
1. 概述与特点
CS10N60 型 VDMOS 晶体管,主要用于线性放大、功率开关。其特点如下: ● 开关速度快 ● 可并联使用 ● 驱动简单 ● 封装形式 |
ETC |
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5 | CS10N60A8HD | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS10N60 A8HD
○R
General Description:
CS10N60 A8HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching perf |
Huajing Microelectronics |
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4 | CS10N60A8R | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS10N60 A8R
○R
General Description:
CS10N60 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performanc |
Huajing Microelectronics |
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3 | CS10N60F | N-CHANNEL MOSFET BRF10N60(CS10N60F)
N-CHANNEL MOSFET/N 沟道 MOS 晶体管
用途: 用于高功率 DC/DC 转换和功率开关。
Purpose: These devices are well suited for high efficiency switching DC/DC converters
and switch mode power supplies.
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BLUE ROCKET ELECTRONICS |
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2 | CS10N60FA9HD | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS10N60F A9HD
○R
General Description:
CS10N60F A9HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching pe |
Huajing Microelectronics |
Teilenummer | Beschreibung | Hersteller | |
TDA7468 | TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR. |
STMicroelectronics |
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SBW3320 | High Voltage Fast-Swit NPN Power Transistor |
WINSEMI SEMICONDUCTOR |
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RLD78NZM5 | 780nm low power single mode laser diode |
ROHM |
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