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CS100N03B8 PDF Datasheet

The CS100N03B8 is SilICon N-channel Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 CS100N03B8
Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS100N03 B8 ○R General Description: CS100N03 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 30 100 100 4.0 switching performance and enhance the avalanche energy. The transistor can be used in various power switching

Huajing Microelectronics
Huajing Microelectronics
pdf

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Recommended search results related to CS100N03B8

Part No Description ( Function) Manufacturers PDF
CS100N03B4   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS100N03 B4 ○R General Description: CS100N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 30 100 100 4.0 switching

Huajing Microelectronics
Huajing Microelectronics
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CS100N03FB9   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS100N03F B9 ○R General Description: CS100N03F B9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 30 100 40 4.0 switching

Huajing Microelectronics
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TOKO  Inc
TOKO Inc
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