Datasheet CJ3406 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CJ3406	MOSFETS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3406 N-Channel Enhancement Mode Field Effect Transistor DESCRIPTION The CJ3406 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or	JCST

CJ3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CJ3407	MOSFETS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3407 P-Channel Enhancement Mode Field Effect Transistor General Description The CJ3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitab	JCST
CJ3420	MOSFETS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ3420 N-Channel Enhancement Mode Field Effect Transistor DESCRIPTION The CJ3420 uses advanced trench technology to provide excellent RDS(on).This device is suitable for use as a uni-direct	JCST
CJ3401	MOSFETS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability MARK	JCST

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Número de pieza	Descripción	Fabricantes	PDF
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