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CJ3401 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
5 | CJ3401 | MOSFETS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401 P-Channel Enhancement Mode Field Effect Transistor
SOT-23
FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistanc |
JCST |
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4 | CJ3401 | P-Channel Enhancement Mode MOSFET CJ3401
Feature
-30V/-4.2A, RDS(ON) =55mΩ(MAX) @VGS = -10V.
RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V.
Super High dense cell design for extremely low RDS(ON) Reliable and Rugged
SOT-23 for Surface |
ZPSEMI |
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3 | CJ3401-HF | MOSFET ( Transistor ) MOSFET
CJ3401-HF (P-Channel )
Reverse Voltage: - 30 Volts Forward Current: - 4.2 A RoHS Device Halogen Free
Features
-P-Channel -High dense cell design for extremely low RDS(ON) -Exceptional on-resistance and miximum DC current capability.
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Comchip |
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2 | CJ3401A | MOSFETS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401A P-Channel Enhancement Mode Field Effect Transistor
FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and ma |
JCST |
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1 | CJ3401A | P-Channel Enhancement Mode Field Effect Transistor CJ3401A
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401A P-Channel Enhancement Mode Field Effect Transistor
FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability
MARKING: R1A
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ZPSEMI |
Teilenummer | Beschreibung | Hersteller | |
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STMicroelectronics |
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ROHM |
www.Datenblatt-PDF.com | 2020 | Kontakt | 1 | ALL |