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Datasheet CJ3139KDW Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | CJ3139KDW | Dual P-Channel Power MOSFET CJ3139KDW
SOT-363 Plastic-Encapsulate MOSFETS
CJ3139KDW Dual P-Channel Power MOSFET
GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced
Power Trench process to optimize the RDS(ON). Including two P-ch CJ3139K MOSFET (independently) in a package.
FEATURE z High-Side Swit |
 ZPSEMI |
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| 2 | CJ3139KDW | MOSFETS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETS
CJ3139KDW Dual P-Channel Power MOSFET
GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced
Power Trench process to optimize the RDS(ON). Including two P-ch CJ3139K MOSFET (independentl |
 JCST |
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| 1 | CJ3139KDW-G | MOSFET ( Transistor ) MOSFET
CJ3139KDW-G (Dual P-Channel )
RoHS Device
Comchip SMD Diode Specialist
V(BR)DSS
RDS(on)MAX
520mΩ @ -4.5V
-20V
700mΩ @ -2.5V
950mΩ(TYP) @ -1.8V
ID -0.66A
Features
- High-side switching - Low on-resistance - Low threshold - Fast switching speed
Mechanical data
- Case: SOT-363, molde |
 Comchip |
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