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Datasheet CEB13N10L Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CEB13N10L   N-Channel Enhancement Mode Field Effect Transistor

CEP13N10L/CEB13N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263
CET
CET		 datasheet CEB13N10L pdf

CEB13N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CEB13N07

N-Channel Enhancement Mode Field Effect Transistor

CEP13N07/CEB13N07 N-Channel Enhancement Mode Field Effect Transistor FEATURES 70V, 13A, RDS(ON) = 125mΩ @VGS = 10V. RDS(ON) = 150mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-
 CET
CET		 datasheet pdf - CET
CEB13N5A

N-Channel Enhancement Mode Field Effect Transistor

CEP13N5A/CEB13N5A CEF13N5A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP13N5A CEB13N5A CEF13N5A VDSS 500V 500V 500V RDS(ON) 0.48Ω 0.48Ω 0.48Ω ID 13A 13A 13A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power a
 CET
CET		 datasheet pdf - CET
CEB13N5

N-Channel Enhancement Mode Field Effect Transistor

CEP13N5/CEB13N5 CEF13N5 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP13N5 CEB13N5 CEF13N5 VDSS 500V 500V 500V RDS(ON) 0.48Ω 0.48Ω 0.48Ω ID 13A 13A 13A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and cur
 CET
CET		 datasheet pdf - CET


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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