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C5122 PDF ( Data Sheet )

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2 C5122   NPN Transistor - 2SC5122

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Abso
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Toshiba
Datenblatt C5122 pdf
1 C5122   CB Transceiver PLL IC

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Datenblatt C5122 pdf



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