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Datasheet BUZ73 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | BUZ73 | SIPMOS Power Transistor BUZ 73
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 73
VDS
200 V
ID
7A
RDS(on)
0.4 Ω
Package TO-220 AB
Ordering Code C67078-S1317-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 7 Unit A
ID IDpul |
 Siemens Semiconductor Group |
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| 10 | BUZ73 | SIPMOS Power Transistor SIPMOS ® Power Transistor
BUZ 73
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
200 V
ID
7A
RDS(on)
0.4 Ω
Package
Ordering Code
BUZ 73
TO-220 AB
C67078-S1317-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 2 |
 Infineon Technologies AG |
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| 9 | BUZ73A | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 73 A
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 73 A
VDS
200 V
ID
5.5 A
RDS(on)
0.6 Ω
Package TO-220 AB
Ordering Code C67078-S1317-A3
Maximum Ratings Parameter Continuous drain current Symbol Values 5.5 Unit A
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Siemens Semiconductor Group |
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| 8 | BUZ73A | 5.8A/ 200V/ 0.600 Ohm/ N-Channel Power MOSFET BUZ73A
Semiconductor
Data Sheet
October 1998
File Number 2263.1
5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET
Features
• 5.8A, 200V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.600Ω (BUZ73 field effect transistor designed for applications such as • S |
 Intersil Corporation |
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