Datasheet BSS84AKM Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BSS84AKM	230 mA P-channel Trench MOSFET BSS84AKM SO T8 83 50 V, 230 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench M	NXP Semiconductors

BSS84 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BSS84	P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET BSS84 P-channel enhancement mode vertical D-MOS transistor Product speciﬁcation Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 18 Philips Semiconductors Product speciﬁcation P-channel enhancement mode	NXP Semiconductors
BSS84	P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 SEPTEMBER 1995 7 PARTMARKING DETAIL SP BSS84 D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Peak Power Dissipation at Tamb=25°C Op	Zetex Semiconductors
BSS84AKM	230 mA P-channel Trench MOSFET BSS84AKM SO T8 83 50 V, 230 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic pa	NXP Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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