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Datasheet BSS138W Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BSS138W | MOSFET ( Transistor ) Main Product Characteristics:
VDSS RDS(on)
50V 1.4Ω (typ.)
ID 0.2A
SOT-323
Features and Benefits:
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and revers |
 Silikron |
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| 3 | BSS138W | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR BSS138W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features
· · · · · · · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed
G G H K M A D
SOT-323 Dim
B C S
Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0°
Max 0.40 1.35 2. |
 Diodes Incorporated |
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| 2 | BSS138W | SIPMOS Small-Signal-Transistor BSS138W
SIPMOS® Small-Signal-Transistor
Features • N-channel • Enhancement mode • Logic level • dv /dt rated
Product Summary V DS R DS(on),max ID 60 3.5 0.28 V Ω A
SOT-323
Type BSS138W BSS138W
Package SOT-323 SOT-323
Ordering Code Q67042-S4187 Q67042-S4191
Tape and Reel Information |
 Infineon Technologies AG |
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| 1 | BSS138W | N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor
December 2010
BSS138W
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistor. These products have been designed to minimize on-state resis |
 Fairchild Semiconductor |
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