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Datasheet BSS123W Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BSS123W | N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary
V(BR)DSS 100V
RDS(ON) 6.0Ω @ VGS = 10V
ID TA = +25°C
170mA
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
• Sm |
 Diodes |
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| 2 | BSS123W | N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS123W — N-Channel Logic Level Enhancement Mode Field Effect Transistor
December 2015
BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor
Features
• 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V
• High Density Cell Design for Low RDS(ON) • |
 Fairchild Semiconductor |
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| 1 | BSS123WQ | N-CHANNEL ENHANCEMENT MODE MOSFET BSS123WQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(ON) 6.0Ω @ VGS = 10V
ID TA = +25°C
170mA
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power m |
Diodes |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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