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Datasheet BSS123 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 18 | BSS123 | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
BSS123 N Channel MOSFET
V(BR)DSS
100 V
RDS(on)MAX
6Ω@10V
10Ω@4.5V
ID
0.17A
FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal |
 JCET |
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| 17 | BSS123 | N-CHANNEL MOSFET BSS123
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
极低的 RDS(ON)为高密度电池设计。 High density cell design for extremely low RDS(ON).
用途 / Applications 适用� |
 BLUE ROCKET ELECTRONICS |
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| 16 | BSS123 | 100V, 150mA, N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BSS123 N-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
FEATURES • Direct inter |
 NXP Semiconductors |
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| 15 | BSS123 | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996 PARTMARKING DETAIL 7 – SA
BSS123
S
D G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Peak Gate-Source Voltage |
 Zetex Semiconductors |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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