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BSS123 Datenblatt PDF

No Teilenummer Beschreibung Hersteller PDF
18 BSS123   N-CHANNEL MOSFET

BSS123 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a SOT-23 Plastic Package. 特征 / Features 极低的 RDS(ON)为高密度电池设计。 High density cell desig
BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS
Datenblatt BSS123 pdf
17 BSS123   N-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS123 N Channel MOSFET V(BR)DSS 100 V RDS(on)MAX  6Ω@10V  10Ω@4.5V   ID 0.17A FEATURE  Surface Mount Package  High Density Cell Design f
JCET
JCET
Datenblatt BSS123 pdf
16 BSS123   N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 0.17A Description and Applications These N-Channel enhancement mode field effect transistors are produce
Diodes Incorporated
Diodes Incorporated
Datenblatt BSS123 pdf
15 BSS123   N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS123 June 2003 BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS te
Fairchild Semiconductor
Fairchild Semiconductor
Datenblatt BSS123 pdf
14 BSS123   SIPMOS Small-Signal-Transistor

Rev. 1.0 BSS123 SIPMOS Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated Product Summary VDS 100 6 0.17 SOT23 V Ω A RDS(on) ID 3 Drain pin 3 Gate pin1 Source pin 2 2 1 VPS05161
Infineon Technologies AG
Infineon Technologies AG
Datenblatt BSS123 pdf


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