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BF998 Datenblatt PDF

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18 BF998   Silicon N-Channel MOSFET Tetrode

Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF998... ESD (
Infineon Technologies AG
Infineon Technologies AG
Datenblatt BF998 pdf
17 BF998   Silicon N-channel dual-gate MOS-FETs

DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Silicon N-channel dual-gate MOS-FETs Product specification BF998; B
NXP
NXP
Datenblatt BF998 pdf
16 BF998   Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)

Silicon N Channel MOSFET Tetrode BF 998 Features q q Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz Type BF 998 Marking MO Ordering Code (tape and reel) Q62702-F1129 Pin
Siemens Semiconductor Group
Siemens Semiconductor Group
Datenblatt BF998 pdf
15 BF998   N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode

BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D In
Vishay Telefunken
Vishay Telefunken
Datenblatt BF998 pdf
14 BF998A   N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode

BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D In
Vishay Telefunken
Vishay Telefunken
Datenblatt BF998A pdf


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