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Datasheet BF1005S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BF1005S | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) BF 1005S
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Q62702-F1665
Pin Config |
 Siemens Semiconductor Group |
 |
| 3 | BF1005S | Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1 GHz
• Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF1005S...
AGC
RF Input
Drain RF Output G2 + DC G1
GND
ESD (Electrost |
 Infineon Technologies AG |
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| 2 | BF1005SR | Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1 GHz
• Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF1005S...
AGC
RF Input
Drain RF Output G2 + DC G1
GND
ESD (Electrost |
Infineon Technologies AG |
|
| 1 | BF1005SW | Silicon N-Channel MOSFET Tetrode BF1005S...
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network
Drain AGC HF Input G2 G1 HF Output + DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
T |
Infineon Technologies AG |
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