| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | BCP1898 | NPN Epitaxial Planar Transistor BCP1898 Elektronische Bauelemente 1A, 100V NPN Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The BCP1898 is designed for switching applications. SOT-89 MARKING 189 8 Date Code 1 A E C 4 2 3 B D F G H K J L CLASSIFICATION OF hFE Product-Rank Range BCP1898-P 82~180 BCP1898-Q 120~270 |
 SeCoS |
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0 1 2 3 4 5 6 7 8 9 |
Recommended search results related to BCP1898 |
| Part No | Description ( Function) | Manufacturers | |
| 1898 | RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS SD1898 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS . . . . . . 1.65 GHz 28 VOLTS EFFICIENCY 40% MIN. CLASS C OPERATION COMMON BASE P OUT = 32 W MIN. WITH 9 dB GAIN .400 SQ. 2LFL (M186) epoxy sealed ORDER CODE SD1898 BRANDING 1898 PIN CONNECTION DESCRIPTION The SD18 |
 STMicroelectronics |
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| 2SA1898 | PNP Epitaxial Planar Silicon Transistor Ordering number:5049 Applications · High-speed switching. Features · Adoption of FBET and MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. PNP Epitaxial Planar Silicon Transistor 2SA1898 DC/DC Converter Applica |
 Sanyo Semicon Device |
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| 2SD1898 | Power Transistor (80V / 1A) 2SD1898 / 2SD1733 NPN 1.0A 80V Middle Power Transistor Parameter VCEO IC Value 80V 1.0A lOutline MPT3 Base Collector Emitter lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB1181 3) Low VCE(sat) VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA) 4) |
 ROHM Semiconductor |
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| 2SD1898 | Epitaxial Planar NPN Transistors 2SD1898 Epitaxial Planar NPN Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature, Storage Tem |
 Weitron Technology |
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| 2SD1898 | POWER TRANSISTOR UTC 2SD1898 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A (DC) *Good hFE linearity. *Low VCE(sat) *Complements the 2SB1260. 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL RATING 100 80 |
 Unisonic Technologies |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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