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B1016 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
2 | B1016 | PNP Transistor - 2SB1016 2SB1016
PNP EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT
SC-67
!
Complement to 2SD1407
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
Characteristic Collector-Base Voltage Collector-Emitter Voltage |
ETC |
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1 | B1016A | PNP Transistor - 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications
2SB1016A
Unit: mm
• High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (sat) = −2.0 V (max) • Complementary t |
Toshiba |
Teilenummer | Beschreibung | Hersteller | |
TDA7468 | TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR. |
STMicroelectronics |
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SBW3320 | High Voltage Fast-Swit NPN Power Transistor |
WINSEMI SEMICONDUCTOR |
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RLD78NZM5 | 780nm low power single mode laser diode |
ROHM |
www.Datenblatt-PDF.com | 2020 | Kontakt | 1 | ALL |