| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | AS081C60W | High Power Stacked Infrared Laser Diode Array AS081C60W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features Applications • Output Power: 60 W • Laser Pumping • 780-830 nm Emission Wavelength • Medical Usage • Spectral Width: ≤4 nm • High power laser diode applications • High Reliability, High Efficiency • CW stack arrays adopt micro-channel package Specifications (25°C) Ite |
 Roithner |
|
0 1 2 3 4 5 6 7 8 9 |
Recommended search results related to AS081C60W |
| Part No | Description ( Function) | Manufacturers | |
| E2081606_PF08127B | MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003 |
 ETC |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
|||