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Datasheet AO4406 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | AO4406 | N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR March 2002
AO4406 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC |
 Alpha Industries |
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| 5 | AO4406 | N-Channel MOSFET Freescale
AO4406/MC4406
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery- |
 Freescale |
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| 4 | AO4406 | N-Channel Enhancement Mode Field Effect Transistor AO4406 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conver |
 Alpha & Omega Semiconductors |
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| 3 | AO4406A | N-Channel MOSFET AO4406A
30V N-Channel MOSFET
General Description
The AO4406A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (a |
Alpha & Omega Semiconductors |
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