| No | Part number | Description ( Function ) | Manufacturers | |
| 7 | AO3409 | P-Channel Enhancement Mode Field Effect Transistor AO3409 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3409 is Pb-free (meets ROHS & Sony 259 specifications). AO3409L is a Green Product ordering opti |
 Alpha & Omega Semiconductors |
|
| 6 | AO3409 | P-Channel Enhancement Mode Field Effect Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3409 AO3409 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3409 is Pb-free (meets ROHS & Sony 259 specifications). |
 Tuofeng Semiconductor |
|
| 5 | AO3409 | P-Channel MOSFET Plastic-Encapsulate Mosfets FEATURES The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. D G S AO3409 P-Channel MOSFET 1.Gate 2.Source 3.Drain SOT-23 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Sou |
 HOTTECH |
|
| 4 | AO3409 | P-Channel Enhancement Mode Field Effect Transistor SMD Type P-Channel Enhancement Mode Field Effect Transistor AO3409 (KO3409) MOSFET Features VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 0-0.1 +0.10.38 -0.1 11.. BGasaete 22.. |
 Kexin |
|
| 3 | AO3409 | 30V P-Channel Enhancement Mode MOSFET 30V P-Channel Enhancement Mode MOSFET Features VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V) AO3409 SOT-23-3L D GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. 1.90 1.00 0.10 0.40 0.85 Max. REF. 1.30 0.20 1.15 0° 10° Absolute Maximu |
 JinYu |
|
| 2 | AO3409 | 30V P-Channel MOSFET AO3409 30V P-Channel MOSFET General Description Product Summary The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) -30V -2.6A < 110mΩ < 180mΩ SOT23 Top View Bottom View D G S Absolute |
 Oucan Semi |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
|||