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AO3407 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
8 | AO3407 | 30V P-Channel MOSFET AO3407
30V P-Channel MOSFET
General Description
The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications.
Product Summary
VDS ID |
Alpha & Omega Semiconductors |
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7 | AO3407 | P-CHANNEL MOSFET AO3407
Rev.C Nov.-2015
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 P 道 MOS 场效应管。P- CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
VDS (V) = -30V ID = -4.1 A RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87m |
BLUE ROCKET ELECTRONICS |
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6 | AO3407 | P-Channel MOSFET Plastic-Encapsulate Mosfets
FEATURES
The AO3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
G
AO3407
P-Channel MOSFET
D
1.Gat |
HOTTECH |
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5 | AO3407 | 30V P-Channel Enhancement Mode MOSFET AO3407
30V P-Channel Enhancement Mode MOSFET
VDS= -30V RDS(ON), Vgs@-10V, Ids@ 4.1A < 64.5m Ω RDS(ON), [email protected], [email protected] < 87m Ω
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Packag |
JinYu |
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4 | AO3407 | P-Channel Enhancement MOSFET SMD Type
P-Channel Enhancement MOSFET
MOSFET IC
AO3407
(KO3407)
SOT-23
Unit: mm
+0.1 2.4 -0.1
ID = -4.1 A RDS(ON) RDS(ON) 52m 87m (VGS = -10V) (VGS = -4.5V)
D
+0.1 1.3 -0.1
VDS (V) = -30V
1
+0.1 0.95 -0.1 +0.1 1.9 -0.1
2
0.55
0.4 |
Kexin |
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