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AO3402 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
7 | AO3402 | N-CHANNEL MOSFET AO3402
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 N 道 MOS 场效应管。N- CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
VDS (V) = 30V ID = 4 A (VGS = 10V) RDS(ON) < 55mΩ (VGS = 10V) RDS(ON) |
BLUE ROCKET ELECTRONICS |
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6 | AO3402 | N-Channel MOSFET FEATURES
The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications.
Plastic-Encapsulate Mosfets
A |
HOTTECH |
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5 | AO3402 | N-Channel Enhancement Mode Field Effect Transistor SMD Type
N-Channel Enhancement Mode Field Effect Transistor AO3402 (KO3402)
MOSFIECT
Features
VDS (V) = 30V ID = 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m (VGS = 2.5V)
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 |
Kexin |
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4 | AO3402 | N-Channel Power MOSFE N-Channel Power MOSFE
Production specification
AO3402
DESCRIPTION The AO3402 is the N-Channel logic
enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This hight-density process is |
TOPSKY |
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3 | AO3402 | N-Channel Enhancement Mode Field Effect Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3402
AO3402 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation |
Tuofeng Semiconductor |
Teilenummer | Beschreibung | Hersteller | |
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STMicroelectronics |
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ROHM |
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