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4AM16 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
1 | 4AM16 | Silicon N-Channel/P-Channel Power MOS FET Array 4AM16
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, I D = –4 A |
Hitachi Semiconductor |
4AM1 Datasheet - resultados coincidentes |
Teilenummer | Beschreibung | Hersteller | |
4AM16 | Silicon N-Channel/P-Channel Power MOS FET Array |
Hitachi Semiconductor |
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4AM13 | Silicon N-Channel/P-Channel Power MOS FET Array |
Hitachi Semiconductor |
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4AM15 | Silicon N-Channel/P-Channel Power MOS FET Array |
Hitachi Semiconductor |
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4AM17 | Silicon N/P-Channel/P-Channel Power MOS FET Array |
Hitachi Semiconductor |
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4AM11 | Silicon N-Channel/P-Channel Power MOS FET Array |
Hitachi Semiconductor |
Teilenummer | Beschreibung | Hersteller | |
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STMicroelectronics |
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ROHM |
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