Datasheet 2SK33 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
86	2SK330	Silicon N Channel Junction Type Transistor TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK330 Unit: mm • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA (max) (VGS = −30 V) • Low RDS (ON	Toshiba Semiconductor
85	2SK3301	Silicon N Channel MOS Type Field Effect Transistor 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK3301 Switching Regulatorand DC-DC Converter Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 0.65 S (typ.) • Low leakage current: IDS	Toshiba Semiconductor
84	2SK3302	Silicon N Channel MOS Type Field Effect Transistor 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3302 Switching Regulator and DC-DC Converter Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 0.4 S (typ.) • Low leakage current: IDS	Toshiba Semiconductor
83	2SK3304	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3304 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply.	NEC

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Número de pieza	Descripción	Fabricantes	PDF
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