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2SK3151 Datenblatt PDF |
| No | Teilenummer | Beschreibung | Hersteller | |
| 2 | 2SK3151 | Silicon N Channel MOS FET 2SK3151
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS (on) = 11.5 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
REJ03G1076-0400 (Previous: ADE-208-747B) |
 Renesas |
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| 1 | 2SK3151 | Silicon N Channel MOS FET High Speed Power Switching 2SK3151
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-747A (Z) 2nd. Edition February 1999 Features
• Low on-resistance R DS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V so |
 Hitachi Semiconductor |
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