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2SK3151 Datenblatt PDF

No Teilenummer Beschreibung Hersteller PDF
2 2SK3151   Silicon N Channel MOS FET

2SK3151 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source REJ03G1076-0400 (Previous: ADE-208-747B)
Renesas
Renesas
Datenblatt 2SK3151 pdf
1 2SK3151   Silicon N Channel MOS FET High Speed Power Switching

2SK3151 Silicon N Channel MOS FET High Speed Power Switching ADE-208-747A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V so
Hitachi Semiconductor
Hitachi Semiconductor
Datenblatt 2SK3151 pdf


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