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Datasheet 2SK2957 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 2SK2957 | Silicon N Channel MOS FET High Speed Power Switching 2SK2957(L),2SK2957(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-567D (Z) 5th. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching
Outline
LDPAK
4 D 4
1 G 1
2
3
2
3
S
1. Gate 2. Drain 3. Source 4. Drain |
 Hitachi Semiconductor |
 |
| 5 | 2SK2957 | Silicon N Channel MOS FET 2SK2957(L), 2SK2957(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1057-0600 (Previous: ADE-208-567D) Rev.6.00 Sep 07, 2005
Features
• Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching
Outline
RENESAS Package code: PRSS0004AE-A (Package n |
 Renesas |
|
| 4 | 2SK2957L | Silicon N Channel MOS FET High Speed Power Switching 2SK2957(L),2SK2957(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-567D (Z) 5th. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching
Outline
LDPAK
4 D 4
1 G 1
2
3
2
3
S
1. Gate 2. Drain 3. Source 4. Drain |
Hitachi Semiconductor |
|
| 3 | 2SK2957L | Silicon N Channel MOS FET 2SK2957(L), 2SK2957(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1057-0600 (Previous: ADE-208-567D) Rev.6.00 Sep 07, 2005
Features
• Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching
Outline
RENESAS Package code: PRSS0004AE-A (Package n |
Renesas |
|
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