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2SK2800 Datenblatt PDF

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1 2SK2800   Silicon N Channel MOS FET High Speed Power Switching

2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 15 mΩ typ. • High speed switching • Low drive current • 4V gate drive device can be drive
Hitachi Semiconductor
Hitachi Semiconductor
Datenblatt 2SK2800 pdf


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