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1 2SK2788   Silicon N Channel MOS FET High Speed Power Switching

2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st. Edition Features • Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A) • Low drive current • High speed switching • 4V gate drive devices.
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Datenblatt 2SK2788 pdf


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