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2 2SK2570   Silicon N Channel MOS FET

2SK2570 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G1019-0200 (Previous: ADE-208-574) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.8 Ω typ. (VGS = 4 V, ID = 100 mA) • 2.5 V gate drive devices. •
Renesas
Renesas
Datenblatt 2SK2570 pdf
1 2SK2570   Silicon N-Channel MOS FET Low Frequency Power Switching

2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching ADE-208-574 1st. Edition Features • Low on-resistance R DS(on) = 0. 8 Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK
Hitachi Semiconductor
Hitachi Semiconductor
Datenblatt 2SK2570 pdf


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