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2SK1933 PDF ( Data Sheet )

No Teilenummer Beschreibung Hersteller PDF
3 2SK1933   N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1933 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed APPLICATIONS ·Suitable for switchin
Inchange Semiconductor
Inchange Semiconductor
Datenblatt 2SK1933 pdf
2 2SK1933   Silicon N Channel MOS FET

2SK1933 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Outline REJ03G0984-0300 (Previous: ADE-208-133
Renesas
Renesas
Datenblatt 2SK1933 pdf
1 2SK1933   Silicon N-Channel MOS FET

2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D G 1 2 3 1. Gate 2. Drain (
Hitachi Semiconductor
Hitachi Semiconductor
Datenblatt 2SK1933 pdf



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