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2SK1933 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
3 | 2SK1933 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1933
DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed
APPLICATIONS ·Suitable for switchin |
Inchange Semiconductor |
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2 | 2SK1933 | Silicon N Channel MOS FET 2SK1933
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator
Outline
REJ03G0984-0300 (Previous: ADE-208-133 |
Renesas |
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1 | 2SK1933 | Silicon N-Channel MOS FET 2SK1933
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator
Outline
TO-3P
D G 1 2 3 1. Gate 2. Drain ( |
Hitachi Semiconductor |
Teilenummer | Beschreibung | Hersteller | |
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