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2SK1807 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
3 | 2SK1807 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage
: VDSS= 900V(Min) ·Fast Switching Speed
isc Product Specification
2SK1807
APPLICATIONS ·High Breakdown Voltage
A |
Inchange Semiconductor |
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2 | 2SK1807 | Silicon N Channel MOS FET 2SK1807
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter
Outline
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Renesas |
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1 | 2SK1807 | Silicon N-Channel MOS FET 2SK1807
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
Outlin |
Hitachi Semiconductor |
Teilenummer | Beschreibung | Hersteller | |
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