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2SJ506 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
3 | 2SJ506 | Silicon P Channel MOS FET High Speed Power Switching 2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-548 Target Specification 1st. Edition Features
• Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High |
Hitachi Semiconductor |
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2 | 2SJ506L | Silicon P Channel MOS FET High Speed Power Switching 2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-548 Target Specification 1st. Edition Features
• Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High |
Hitachi Semiconductor |
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1 | 2SJ506S | Silicon P Channel MOS FET High Speed Power Switching 2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-548 Target Specification 1st. Edition Features
• Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High |
Hitachi Semiconductor |
Teilenummer | Beschreibung | Hersteller | |
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STMicroelectronics |
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