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2SJ506 PDF ( Data Sheet )

No Teilenummer Beschreibung Hersteller PDF
3 2SJ506   Silicon P Channel MOS FET High Speed Power Switching

2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High
Hitachi Semiconductor
Hitachi Semiconductor
Datenblatt 2SJ506 pdf
2 2SJ506L   Silicon P Channel MOS FET High Speed Power Switching

2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High
Hitachi Semiconductor
Hitachi Semiconductor
Datenblatt 2SJ506L pdf
1 2SJ506S   Silicon P Channel MOS FET High Speed Power Switching

2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High
Hitachi Semiconductor
Hitachi Semiconductor
Datenblatt 2SJ506S pdf



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