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Datasheet 2SD2122L Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 2SD2122L   Silicon NPN Epitaxial

2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Ratings (Ta = 25°C)
 Hitachi Semiconductor
Hitachi Semiconductor		 datasheet 2SD2122L pdf

2SD21 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
2SD2144

High-current Gain MediumPower Transistor (20V/ 0.5A)

Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial plana
 ROHM Semiconductor
ROHM Semiconductor		 datasheet pdf - ROHM Semiconductor
2SD218

(2SD217 / 2SD218) NPN SILICON EPITAXIAL MESA TRANSISTOR

 ETC
ETC		 datasheet pdf - ETC
2SD2155

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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